manufacturers

RFQ

Partner with Us

english

Home > products > Discrete Semiconductor Products >

PDTC114EQBZ

quality [#varpname#] factory

quality [#varpname#] factory

PDTC114EQBZ

manufacturer:

Nexperia

Description:

PDTC114EQB/SOT8015/DFN1110D-3

Supplier Device Package:

DFN1110D-3

Quick RFQ

In stock:

Please send RFQ , we will respond immediately. (*is mandatory)

Product Details

Mfr.Part #:

PDTC114EQBZ

Stock:

5000

Product Category:

Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector (Ic) (Max):

100 MA

Current - Collector Cutoff (Max):

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce:

30 @ 5mA, 5V

Frequency - Transition:

180 MHz

Mounting Type:

Surface Mount, Wettable Flank

Package / Case:

3-XDFN Exposed Pad

Power - Max:

340 MW

Product Status:

Active

Resistor - Base (R1):

10 KOhms

Resistor - Emitter Base (R2):

10 KOhms

Transistor Type:

PNP - Pre-Biased

Vce Saturation (Max) @ Ib, Ic:

100mV @ 500µA, 10mA

Voltage - Collector Emitter Breakdown (Max):

50 V

Product Description

PDTC114EQBZ Related Products

quality [#varpname#] factory

PDTC124TT,215

quality [#varpname#] factory

RN1303,LF

quality [#varpname#] factory

RN1106MFV,L3F

quality [#varpname#] factory

UNRF2A300A

quality [#varpname#] factory

UNRF2AN00A

quality [#varpname#] factory

UNRF1A300A

quality [#varpname#] factory

DTC343TKT146

quality [#varpname#] factory

MMUN2111LT3G

quality [#varpname#] factory

UNR212200L

quality [#varpname#] factory

UNR411400A

quality [#varpname#] factory

UNR411E00A

quality [#varpname#] factory

UNR222300L

quality [#varpname#] factory

UNR221D00L

quality [#varpname#] factory

UNR52A4G0L

quality [#varpname#] factory

UNR511500L

quality [#varpname#] factory

UNR9111G0L

quality [#varpname#] factory

UNR32A1G0L

quality [#varpname#] factory

UNR211300L

quality [#varpname#] factory

UNR515400L

quality [#varpname#] factory

UNR211000L

quality [#varpname#] factory

UNR92ANG0L