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PDTC114EQB-QZ

quality PDTC114EQB-QZ factory

quality PDTC114EQB-QZ factory

PDTC114EQB-QZ

manufacturer:

Nexperia

Description:

PDTC114EQB-Q/SOT8015/DFN1110D-

Supplier Device Package:

DFN1110D-3

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Product Details

Mfr.Part #:

PDTC114EQB-QZ

Stock:

5000

Product Category:

Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector (Ic) (Max):

100 MA

Current - Collector Cutoff (Max):

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce:

30 @ 5mA, 5V

Frequency - Transition:

230 MHz

Mounting Type:

Surface Mount, Wettable Flank

Package / Case:

3-XDFN Exposed Pad

Power - Max:

340 MW

Product Status:

Active

Resistor - Base (R1):

10 KOhms

Resistor - Emitter Base (R2):

10 KOhms

Transistor Type:

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic:

100mV @ 500µA, 10mA

Voltage - Collector Emitter Breakdown (Max):

50 V

Product Description

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