logo
Created with Pixso. Home > products > Discrete Semiconductor Products >

RN2105,LXHF(CT

quality [#varpname#] factory

RN2105,LXHF(CT

manufacturer:
Toshiba Electronic Devices And Storage Corporation
Description:
AUTO AEC-Q TR PNP Q1BSR=2.2KOHM,
Supplier Device Package:
SSM
Quick RFQ
In stock:
Please send RFQ , we will respond immediately. (*is mandatory)
*
*
*
*
Product Details
Mfr.Part #:
RN2105,LXHF(CT
Stock:
3000
Product Category:
Transistors - Bipolar (BJT) - Single, Pre-Biased
Current - Collector (Ic) (Max):
100 MA
Current - Collector Cutoff (Max):
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Frequency - Transition:
200 MHz
Mounting Type:
Surface Mount
Package / Case:
SC-75, SOT-416
Power - Max:
100 MW
Product Status:
Active
Resistor - Base (R1):
2.2 KOhms
Resistor - Emitter Base (R2):
47 KOhms
Transistor Type:
PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Product Description