manufacturers

RFQ

Partner with Us

english

Home > products > Discrete Semiconductor Products >

RN1310,LXHF

quality [#varpname#] factory

RN1310,LXHF

manufacturer:

Toshiba Electronic Devices And Storage Corporation

Description:

AUTO AEC-Q NPN BRT, Q1BSR=4.7K,

Supplier Device Package:

SC-70

Quick RFQ

In stock:

Please send RFQ , we will respond immediately. (*is mandatory)

Product Details

Mfr.Part #:

RN1310,LXHF

Stock:

6000

Product Category:

Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector (Ic) (Max):

100 MA

Current - Collector Cutoff (Max):

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:

120 @ 1mA, 5V

Frequency - Transition:

250 MHz

Mounting Type:

Surface Mount

Package / Case:

SC-70, SOT-323

Power - Max:

100 MW

Product Status:

Active

Resistor - Base (R1):

4.7 KOhms

Transistor Type:

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic:

300mV @ 250µA, 5mA

Voltage - Collector Emitter Breakdown (Max):

50 V

Product Description

RN1310,LXHF Related Products

quality [#varpname#] factory

PDTC124TT,215

quality [#varpname#] factory

RN1303,LF

quality [#varpname#] factory

RN1106MFV,L3F

quality [#varpname#] factory

UNRF2A300A

quality [#varpname#] factory

UNRF2AN00A

quality [#varpname#] factory

UNRF1A300A

quality [#varpname#] factory

DTC343TKT146

quality [#varpname#] factory

MMUN2111LT3G

quality [#varpname#] factory

UNR212200L

quality [#varpname#] factory

UNR411400A

quality [#varpname#] factory

UNR411E00A

quality [#varpname#] factory

UNR222300L

quality [#varpname#] factory

UNR221D00L

quality [#varpname#] factory

UNR52A4G0L

quality [#varpname#] factory

UNR511500L

quality [#varpname#] factory

UNR9111G0L

quality [#varpname#] factory

UNR32A1G0L

quality [#varpname#] factory

UNR211300L

quality [#varpname#] factory

UNR515400L

quality [#varpname#] factory

UNR211000L

quality [#varpname#] factory

UNR92ANG0L