Manufacturers

RFQ

Partner with Us

english

Home > Products > Discrete Semiconductor Products >

PDTC123JQCZ

quality PDTC123JQCZ factory

quality PDTC123JQCZ factory

PDTC123JQCZ

Manufacturer:

Nexperia

Description:

PDTC123JQC/SOT8009/DFN1412D-3

Supplier Device Package:

DFN1412D-3

Quick RFQ

In stock:

Please send RFQ , we will respond immediately. (*is mandatory)

Product Details

Mfr.Part #:

PDTC123JQCZ

Stock:

5000

Product Category:

Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector (Ic) (Max):

100 MA

Current - Collector Cutoff (Max):

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce:

100 @ 10mA, 5V

Frequency - Transition:

230 MHz

Mounting Type:

Surface Mount, Wettable Flank

Package / Case:

3-XDFN Exposed Pad

Power - Max:

360 MW

Product Status:

Obsolete

Resistor - Base (R1):

2.2 KOhms

Resistor - Emitter Base (R2):

47 KOhms

Transistor Type:

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic:

100mV @ 250µA, 5mA

Voltage - Collector Emitter Breakdown (Max):

50 V

Product Description

PDTC123JQCZ Related Products

quality PDTC124TT,215 factory

PDTC124TT,215

quality RN1303,LF factory

RN1303,LF

quality RN1106MFV,L3F factory

RN1106MFV,L3F

quality UNRF2A300A factory

UNRF2A300A

quality UNRF2AN00A factory

UNRF2AN00A

quality UNRF1A300A factory

UNRF1A300A

quality DTC343TKT146 factory

DTC343TKT146

quality MMUN2111LT3G factory

MMUN2111LT3G

quality UNR212200L factory

UNR212200L

quality UNR411400A factory

UNR411400A

quality UNR411E00A factory

UNR411E00A

quality UNR222300L factory

UNR222300L

quality UNR221D00L factory

UNR221D00L

quality UNR52A4G0L factory

UNR52A4G0L

quality UNR511500L factory

UNR511500L

quality UNR9111G0L factory

UNR9111G0L

quality UNR32A1G0L factory

UNR32A1G0L

quality UNR211300L factory

UNR211300L

quality UNR515400L factory

UNR515400L

quality UNR211000L factory

UNR211000L

quality UNR92ANG0L factory

UNR92ANG0L