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Created with Pixso. Home > products > Discrete Semiconductor Products >

IMZC120R017M2H
quality [#varpname#] factory
quality [#varpname#] factory

IMZC120R017M2H

manufacturer:
Infineon Technologies
Description:
Wider Max. VGS Range From -10 V To +25 V
Supplier Device Package:
PG-TO247-4
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Product Details
Benefits:
Higher Power Density
Ciss:
2910 PF
Coss:
126 PF
ID (@ TC=25°C) Max:
97 A
Ptot (@ TA=25°C) Max:
382 W
Pin Count:
4 Pins
Polarity:
N
QG:
89 NC
Qgd:
24 NC
Qualification:
Industrial
RDS (on) (@ Tj = 25°C):
17 MΩ
RthJA Max:
62 K/W
RthJC Max:
0.39 K/W
Technology:
CoolSiC™ G2
VDS Max:
1200 V
Moisture Level:
NA
Product Description

IMZC120R017M2H-DataSheet

 

The CoolSiC™ MOSFET discrete 1200 V, 17 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Typical Applications

- General-purpose drives (GPD).                                        - Electric Vehicle (EV) charging.
- Online Uninterruptible Power Supplies (UPS).                 - Solar power optimizers
- String inverters.                                                                 - Energy Storage Systems (ESS).
- Welding equipment.

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