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EPC2019

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EPC2019

manufacturer:

EPC

Description:

GANFET N-CH 200V 8.5A DIE

Supplier Device Package:

Die

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Product Details

Mfr.Part #:

EPC2019

Stock:

98029

Product Category:

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C:

8.5A (Ta)

Drain To Source Voltage (Vdss):

200 V

Drive Voltage (Max Rds On, Min Rds On):

5V

FET Type:

N-Channel

Gate Charge (Qg) (Max) @ Vgs:

2.9 NC @ 5 V

Input Capacitance (Ciss) (Max) @ Vds:

288 PF @ 100 V

Mounting Type:

Surface Mount

Operating Temperature:

-40°C ~ 150°C (TJ)

Package / Case:

Die

Product Status:

Active

Rds On (Max) @ Id, Vgs:

42mOhm @ 7A, 5V

Technology:

GaNFET (Gallium Nitride)

Vgs (Max):

+6V, -4V

Vgs(th) (Max) @ Id:

2.5V @ 1.5mA

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