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SI2301CDS-T1-GE3

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SI2301CDS-T1-GE3

manufacturer:

Vishay

Description:

MOSFET P-CH 20V 3.1A SOT23-3

Supplier Device Package:

SOT-23-3 (TO-236)

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Product Details

Mfr.Part #:

SI2301CDS-T1-GE3

Stock:

104235

Product Category:

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C:

3.1A (Tc)

Drain To Source Voltage (Vdss):

20 V

Drive Voltage (Max Rds On, Min Rds On):

2.5V, 4.5V

FET Type:

P-Channel

Gate Charge (Qg) (Max) @ Vgs:

10 NC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds:

405 PF @ 10 V

Mounting Type:

Surface Mount

Operating Temperature:

-55°C ~ 150°C (TJ)

Package / Case:

TO-236-3, SC-59, SOT-23-3

Power Dissipation (Max):

860mW (Ta), 1.6W (Tc)

Product Status:

Active

Rds On (Max) @ Id, Vgs:

112mOhm @ 2.8A, 4.5V

Technology:

MOSFET (Metal Oxide)

Vgs (Max):

±8V

Vgs(th) (Max) @ Id:

1V @ 250µA

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