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SCT2750NYTB

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SCT2750NYTB

manufacturer:

ROHM Semiconductor

Description:

SICFET N-CH 1700V 5.9A TO268

Supplier Device Package:

TO-268

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Product Details

Mfr.Part #:

SCT2750NYTB

Stock:

1548

Product Category:

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C:

5.9A (Tc)

Drain To Source Voltage (Vdss):

1700 V

Drive Voltage (Max Rds On, Min Rds On):

18V

FET Type:

N-Channel

Gate Charge (Qg) (Max) @ Vgs:

17 NC @ 18 V

Input Capacitance (Ciss) (Max) @ Vds:

275 PF @ 800 V

Mounting Type:

Surface Mount

Operating Temperature:

175°C (TJ)

Package / Case:

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Power Dissipation (Max):

57W (Tc)

Product Status:

Active

Rds On (Max) @ Id, Vgs:

975mOhm @ 1.7A, 18V

Technology:

SiCFET (Silicon Carbide)

Vgs (Max):

+22V, -6V

Vgs(th) (Max) @ Id:

4V @ 630µA

Product Description

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